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    1996 Sep 11 3 NXP Semiconductors Product data sheet High-speed diode 1PS193 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA 610 ? mV IF = 10 mA 740 ? mV IF = 50 mA ? 1.0 V IF = 100 mA ? 1.2 V IR reverse current see Fig.4 VR = 25 V ? 30 nA VR = 80 V ? 0.5 μA VR = 25 V; Tj = 150 °C ? 30 μA VR = 80 V; Tj = 150 °C; ? 100 μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.5 ? 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.6 ? 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tp = 20 ns; see Fig.7 ? 1.75 V THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 250 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W |